Electrically‐Driven Photonic Crystal Lasers with Ultra‐low Threshold

Light sources with ultra-low energy consumption and high performance are required to realize optical interconnects for on-chip communication. Photonic crystal (PhC) nanocavity lasers one of the most promising candidates fill this role. In work, we demonstrate an electrically-driven PhC nanolaser threshold current 10.2 {\mu}A emitting at 1540 nm operated room temperature. The InP-based bonded on Si comprise a buried heterostructure active region lateral p-i-n junction. static characteristics thermal properties have been characterized. effect disorder p-doping absorption Q-factor passive cavities was studied. We also investigate leakage due geometry by comparing electrical pumping schemes.